Discrete Semiconductor Products

SF1200-TAP

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DIODE GEN PURP 1.2KV 1A SOD57

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Discrete Semiconductor Products

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DIODE GEN PURP 1.2KV 1A SOD57

Technical Specifications

Parameters and characteristics for this part

Specification	SF1200-TAP

Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction	125 °C
Package / Case	SOD-57, Axial
Reverse Recovery Time (trr)	75 ns
Speed	200 mA, 500 ns
Supplier Device Package	SOD-57
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	3.4 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Reverse Recovery Time (trr)	Technology	Package / Case	Mounting Type	Current - Reverse Leakage @ Vr	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Operating Temperature - Junction
Vishay General Semiconductor - Diodes Division SF1200-TR	1.2 kV	1 A	3.4 V	75 ns	Standard	Axial SOD-57	Through Hole	5 µA	200 mA 500 ns	175 ░C	-55 C	SOD-57
Vishay General Semiconductor - Diodes Division SF1200-TAP	1.2 kV	1 A	3.4 V	75 ns	Standard	Axial SOD-57	Through Hole	5 µA	200 mA 500 ns			SOD-57	125 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1200 V 1A Through Hole SOD-57

Technical documentation and resources