Discrete Semiconductor Products

SBM860VSS_AY_00001

NRND

DIODE SCHOTTKY 60V 8A DO201AD

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Discrete Semiconductor Products

NRND

DIODE SCHOTTKY 60V 8A DO201AD

Technical Specifications

Parameters and characteristics for this part

Specification	SBM860VSS_AY_00001

Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	220 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-201AD, Axial
Speed	500 ns, 200 mA
Supplier Device Package	DO-201AD
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	60 V
Voltage - Forward (Vf) (Max) @ If	550 mV

Part	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Mounting Type	Current - Average Rectified (Io)	Technology	Speed	Supplier Device Package
Panjit International Inc. SBM860VSS_AY_00001	DO-201AD Axial	60 V	220 µA	550 mV	-55 °C	150 °C	Through Hole	8 A	Schottky	200 mA 500 ns	DO-201AD

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General part information

Diode 60 V 8A Through Hole DO-201AD

Technical documentation and resources

No documents available