Discrete Semiconductor Products

SI4421DY-T1-E3

LTB

MOSFET P-CH 20V 10A 8SO

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Discrete Semiconductor Products

LTB

MOSFET P-CH 20V 10A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	SI4421DY-T1-E3

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	125 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	1.5 W
Rds On (Max) @ Id, Vgs	8.75 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	800 mV

Part	Mounting Type	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Package / Case	Package / Case [y]	Package / Case [x]	Rds On (Max) @ Id, Vgs	Technology	Vgs (Max)
Vishay General Semiconductor - Diodes Division SI4421DY-T1-E3	Surface Mount	P-Channel	1.8 V 4.5 V	20 V	125 nC	-55 °C	150 °C	8-SOIC	10 A	800 mV	1.5 W	8-SOIC	3.9 mm	0.154 in	8.75 mOhm	MOSFET (Metal Oxide)	8 V

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General part information

P-Channel 20 V 10A (Ta) 1.5W (Ta) Surface Mount 8-SOIC

Technical documentation and resources