Discrete Semiconductor Products

EU 1ZV0

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DIODE GEN PURP 200V 500MA AXIAL

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Discrete Semiconductor Products

Active

DIODE GEN PURP 200V 500MA AXIAL

Technical Specifications

Parameters and characteristics for this part

Specification	EU 1ZV0

Current - Average Rectified (Io)	500 mA
Current - Reverse Leakage @ Vr	10 ÁA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	Axial
Reverse Recovery Time (trr)	400 ns
Speed	500 ns, 200 mA
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	1 V

Part	Speed	Technology	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Reverse Recovery Time (trr)	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Mounting Type	Current - Average Rectified (Io)
Sanken Electric USA Inc. EU 1V	200 mA 500 ns	Standard	2.5 V	-40 °C	150 °C	400 ns	Axial	400 V	10 µA	Through Hole	250 mA
Sanken Electric USA Inc. EU 1ZV	200 mA 500 ns	Standard	1 V	-40 °C	150 °C	400 ns	Axial	200 V	10 ÁA	Through Hole	500 mA
Sanken Electric USA Inc. EU 1ZV1	200 mA 500 ns	Standard	1 V	-40 °C	150 °C	400 ns	Axial	200 V	10 ÁA	Through Hole	500 mA
Sanken Electric USA Inc. EU 1V0	200 mA 500 ns	Standard	2.5 V	-40 °C	150 °C	400 ns	Axial	400 V	10 µA	Through Hole	250 mA
Sanken Electric USA Inc. EU 1V1	200 mA 500 ns	Standard	2.5 V	-40 °C	150 °C	400 ns	Axial	400 V	10 µA	Through Hole	250 mA
Sanken Electric USA Inc. EU 1ZV0	200 mA 500 ns	Standard	1 V	-40 °C	150 °C	400 ns	Axial	200 V	10 ÁA	Through Hole	500 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 200 V 500mA Through Hole

Technical documentation and resources