Discrete Semiconductor Products

NTMS4706NR2

Obsolete

MOSFET N-CH 30V 6.4A 8SOIC

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 6.4A 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	NTMS4706NR2

Current - Continuous Drain (Id) @ 25°C	6.4 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	15 nC
Input Capacitance (Ciss) (Max) @ Vds	950 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max) [Max]	830 mW
Rds On (Max) @ Id, Vgs	12 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Package / Case	Package / Case [y]	Package / Case [x]	Rds On (Max) @ Id, Vgs	Vgs (Max)	FET Type	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]
ON Semiconductor NTMS4700NR2G	8-SOIC	3.9 mm	0.154 in	7.2 mOhm	20 V	N-Channel	8-SOIC	1600 pF	24 nC	MOSFET (Metal Oxide)	860 mW	30 V	4.5 V 10 V	3 V	8.6 A	Surface Mount	-55 °C	150 °C
ON Semiconductor NTMS4706NR2	8-SOIC	3.9 mm	0.154 in	12 mOhm	20 V	N-Channel	8-SOIC	950 pF		MOSFET (Metal Oxide)		30 V	4.5 V 10 V	2.5 V	6.4 A	Surface Mount	-55 °C	150 °C	15 nC	830 mW

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 30 V 6.4A (Ta) 830mW (Ta) Surface Mount 8-SOIC

Technical documentation and resources