Integrated Circuits (ICs)

IR2184PBF

NRND

EICEDRIVER™ 600 V HALF BRIDGE DRIVER IC WITH TYPICAL 1.9 A SOURCE AND 2.3 A SINK OUTPUT CURRENTS. IT COMES WITH A FUNCTIONAL LEVELSHIFT PDIP8 PACKAGE AND WORKS WITH IGBTS AND MOSFETS. FEATURES: ENABLE, SHOOT THROUGH PROTECTION, SHUTDOWN, SINGLE INPUT

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DocumentsDatasheet Technical Data Sheet EN

Integrated Circuits (ICs)

IR2184PBF

NRND

INFINEON

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DocumentsDatasheet Technical Data Sheet EN

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IR2184PBF

Channel Type	Synchronous
Current - Peak Output (Source, Sink) [custom]	1.9 A
Current - Peak Output (Source, Sink) [custom]	2.3 A
Driven Configuration	Half-Bridge
Gate Type	N-Channel MOSFET, IGBT, MOSFET (N-Channel)
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH	0.8 V, 2.7 V
Mounting Type	Through Hole
Number of Drivers	2
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	8-DIP (0.300", 7.62mm)
Rise / Fall Time (Typ) [custom]	20 ns
Rise / Fall Time (Typ) [custom]	40 ns
Supplier Device Package	8-PDIP
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	10 VDC

IR2184 Series

Part	Gate Type	Operating Temperature [Min]	Operating Temperature [Max]	Input Type	Number of Drivers	Supplier Device Package	High Side Voltage - Max (Bootstrap) [Max]	Channel Type	Mounting Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Voltage - Supply [Max]	Voltage - Supply [Min]	Logic Voltage - VIL, VIH	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Driven Configuration	Package / Case	Package / Case	Package / Case
INFINEON IR2184STRPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	-40 °C	150 °C	Non-Inverting	2	8-SOIC	600 V	Synchronous	Surface Mount	20 ns	40 ns	20 V	10 VDC	0.8 V 2.7 V	1.9 A	2.3 A	Half-Bridge	0.154 in	8-SOIC	3.9 mm
INFINEON IR2184SPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	-40 °C	150 °C	Non-Inverting	2	8-SOIC	600 V	Synchronous	Surface Mount	20 ns	40 ns	20 V	10 VDC	0.8 V 2.7 V	1.9 A	2.3 A	Half-Bridge	0.154 in	8-SOIC	3.9 mm
INFINEON IR2184S	IGBT MOSFET (N-Channel) N-Channel MOSFET	-40 °C	150 °C	Non-Inverting	2	8-SOIC	600 V	Synchronous	Surface Mount	20 ns	40 ns	20 V	10 VDC	0.8 V 2.7 V	1.9 A	2.3 A	Half-Bridge	0.154 in	8-SOIC	3.9 mm
INFINEON IR2184PBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	-40 °C	150 °C	Non-Inverting	2	8-PDIP	600 V	Synchronous	Through Hole	20 ns	40 ns	20 V	10 VDC	0.8 V 2.7 V	1.9 A	2.3 A	Half-Bridge		8-DIP (0.300" 7.62mm)
INFINEON IR2184	IGBT MOSFET (N-Channel) N-Channel MOSFET	-40 °C	150 °C	Non-Inverting	2	8-PDIP	600 V	Synchronous	Through Hole	20 ns	40 ns	20 V	10 VDC	0.8 V 2.7 V	1.9 A	2.3 A	Half-Bridge		8-DIP (0.300" 7.62mm)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	1	$ 2.94
		10	$ 2.23
		50	$ 2.03
		100	$ 1.96
		500	$ 1.77
Digikey	N/A	2175	$ 3.32
	Tube	1	$ 3.48
		10	$ 3.12
		50	$ 2.95
		100	$ 2.56
		250	$ 2.43
		500	$ 2.18
		1000	$ 1.84
		2500	$ 1.74
		5000	$ 1.68

Description

General part information

IR2184 Series

The IR2184PBF is a high voltage high speed power MOSFET and IGBT Half-bridge Driver with dependent high and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technology enables ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output and down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive a N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600V.