Integrated Circuits (ICs)

HIP2101IRT

Obsolete

Renesas Electronics Corporation

IC GATE DRVR HALF-BRIDGE 16QFN

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Integrated Circuits (ICs)

HIP2101IRT

Obsolete

Renesas Electronics Corporation

IC GATE DRVR HALF-BRIDGE 16QFN

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	HIP2101IRT

Channel Type	Independent
Current - Peak Output (Source, Sink) [custom]	2 A
Current - Peak Output (Source, Sink) [custom]	2 A
Driven Configuration	Half-Bridge
Gate Type	N-Channel MOSFET
High Side Voltage - Max (Bootstrap) [Max]	114 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH [custom]	2.2 V
Logic Voltage - VIL, VIH [custom]	0.8 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	16-VQFN Exposed Pad
Rise / Fall Time (Typ) [custom]	10 ns
Rise / Fall Time (Typ) [custom]	10 ns
Supplier Device Package	16-QFN (5x5)
Voltage - Supply [Max]	14 V
Voltage - Supply [Min]	9 V

HIP2101 Series

100V/2A Peak High-Frequency Half Bridge Driver with TTL Logic Inputs

Part	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	High Side Voltage - Max (Bootstrap) [Max]	Logic Voltage - VIL, VIH [custom]	Logic Voltage - VIL, VIH [custom]	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Input Type	Package / Case	Channel Type	Mounting Type	Gate Type	Driven Configuration	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Number of Drivers	Voltage - Supply [Min]	Voltage - Supply [Max]	Package / Case [y]	Package / Case [x]	Package / Case	Package / Case
Renesas Electronics Corporation HIP2101IRZ	10 ns	10 ns	114 V	2.2 V	0.8 V	-55 °C	150 °C	16-QFN (5x5)	Non-Inverting	16-VQFN Exposed Pad	Independent	Surface Mount	N-Channel MOSFET	Half-Bridge	2 A	2 A	2	9 V	14 V
Renesas Electronics Corporation HIP2101IBZ	10 ns	10 ns	114 V	2.2 V	0.8 V	-55 °C	150 °C	8-SOIC	Non-Inverting	8-SOIC	Independent	Surface Mount	N-Channel MOSFET	Half-Bridge	2 A	2 A	2	9 V	14 V	3.9 mm	0.154 in
Renesas Electronics Corporation HIP2101IR4Z	10 ns	10 ns	114 V	2.2 V	0.8 V	-55 °C	150 °C	12-DFN (4x4)	Non-Inverting	12-VFDFN Exposed Pad	Independent	Surface Mount	N-Channel MOSFET	Half-Bridge	2 A	2 A	2	9 V	14 V
Renesas Electronics Corporation HIP2101EIBZ	10 ns	10 ns	114 V	2.2 V	0.8 V	-55 °C	150 °C	8-SOIC-EP	Non-Inverting	8-SOIC	Independent	Surface Mount	MOSFET (N-Channel)	Half-Bridge	2 A	2 A	2	9 V	14 V			0.154 in	3.9 mm
Renesas Electronics Corporation HIP2101IRT	10 ns	10 ns	114 V	2.2 V	0.8 V	-55 °C	150 °C	16-QFN (5x5)	Non-Inverting	16-VQFN Exposed Pad	Independent	Surface Mount	N-Channel MOSFET	Half-Bridge	2 A	2 A	2	9 V	14 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

HIP2101 Series

The HIP2101 is a high frequency, 100V Half Bridge N-Channel power MOSFET driver IC. It is equivalent to the HIP2100 with the added advantage of full TTL/CMOS compatible logic input pins. The low-side and high-side gate drivers are independently controlled and matched to 13ns. This gives users total control over dead time for specific power circuit topologies. Undervoltage protection on both the low-side and high-side supplies force the outputs low. An on-chip diode eliminates the discrete diode required with other driver ICs. A new level-shifter topology yields the low-power benefits of pulsed operation with the safety of DC operation. Unlike some competitors, the high-side output returns to its correct state after a momentary undervoltage of the high-side supply.

Documents

Technical documentation and resources