Zenode.ai Logo
Beta
No image
Discrete Semiconductor Products

NSVMUN5136T1G

Active
ON Semiconductor

BIAS RESISTOR TRANSISTOR

Deep-Dive with AI

Search across all available documentation for this part.

Discrete Semiconductor Products

NSVMUN5136T1G

Active
ON Semiconductor

BIAS RESISTOR TRANSISTOR

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationNSVMUN5136T1G
Current - Collector (Ic) (Max) [Max]100 mA
Current - Collector Cutoff (Max) [Max]500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]80
GradeAutomotive
Mounting TypeSurface Mount
Package / CaseSC-70, SOT-323
Power - Max [Max]202 mW
QualificationAEC-Q101
Resistor - Base (R1)100 kOhms
Resistor - Emitter Base (R2)100 kOhms
Supplier Device PackageSC-70 (SOT323)
Transistor TypePNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]50 V

MUN5136DW1 Series

Dual Bias Resistor Transistor

PartResistor - Emitter Base (R2)Resistor - Base (R1)Mounting TypeVce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max) [Max]Package / CaseCurrent - Collector (Ic) (Max) [Max]Power - Max [Max]Transistor TypeSupplier Device PackageCurrent - Collector Cutoff (Max) [Max]DC Current Gain (hFE) (Min) @ Ic, Vce [Min]GradeQualification
SOT-363
ON Semiconductor
100 kOhms
100 kOhms
Surface Mount
250 mV
50 V
6-TSSOP
SC-88
SOT-363
100 mA
250 mW
2 PNP - Pre-Biased (Dual)
SC-88
SC70-6
SOT-363
500 nA
80
SOT-363
ON Semiconductor
100 kOhms
100 kOhms
Surface Mount
250 mV
50 V
6-TSSOP
SC-88
SOT-363
100 mA
250 mW
2 PNP - Pre-Biased (Dual)
SC-88
SC70-6
SOT-363
500 nA
80
ON Semiconductor
100 kOhms
100 kOhms
Surface Mount
250 mV
50 V
SC-70
SOT-323
100 mA
202 mW
PNP - Pre-Biased
SC-70 (SOT323)
500 nA
80
Automotive
AEC-Q101

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 50000$ 0.01

Description

General part information

MUN5136DW1 Series

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.

Documents

Technical documentation and resources

No documents available