Discrete Semiconductor Products
RD3N03BATTL1
ActiveRohm Semiconductor
PCH -80V -30A, TO-252 (DPAK), POWER MOSFET
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Search across all available documentation for this part.
Discrete Semiconductor Products
RD3N03BATTL1
ActiveRohm Semiconductor
PCH -80V -30A, TO-252 (DPAK), POWER MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | RD3N03BATTL1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 30 A |
| Drain to Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 6 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 2200 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | TO-252-3, SC-63, DPAK (2 Leads + Tab) |
| Power Dissipation (Max) | 54 W |
| Rds On (Max) @ Id, Vgs | 56 mOhm |
| Supplier Device Package | TO-252 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 2.24 | |
Description
General part information
RD3N03BAT Series
RD3N03BAT is a power MOSFET with low-on resistance and high power package, suitable for Switching and Motor drives applications.
Documents
Technical documentation and resources