Discrete Semiconductor Products

AO4627

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MOSFET N/P-CH 30V 8SOIC

Discrete Semiconductor Products

Active

MOSFET N/P-CH 30V 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	AO4627

Configuration	N, P-Channel
Current - Continuous Drain (Id) (Maximum)	3.5 A
Current - Continuous Drain (Id) (Typical)	4.5 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Max)	5 nC
Input Capacitance (Ciss) (Max)	210 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Power - Max	2 VA
Rds On (Max)	50 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	2.5 V

Part	Rds On (Max)	Input Capacitance (Ciss) (Max)	Gate Charge (Max)	Power - Max	Drain to Source Voltage (Vdss)	Package Name	Configuration	Mounting Type	Package Length	Package Width	Operating Temperature (Min)	Operating Temperature (Max)	Vgs(th) (Max)	Technology	FET Feature	Current - Continuous Drain (Id) (Maximum)	Current - Continuous Drain (Id) (Typical)
Alpha & Omega Semiconductor Inc. AO4620	24 mOhm	448 pF	11 nC	2 VA	30 V	8-SOIC	N P-Channel	Surface Mount	0.154 in	3.9 mm	-55 °C	150 °C	2.6 V	MOSFET (Metal Oxide)
Alpha & Omega Semiconductor Inc. AO4622	23 mOhm	1100 pF	18 nC	2 VA	20 V	8-SOIC	N P-Channel	Surface Mount	0.154 in	3.9 mm	-55 °C	150 °C	2 V	MOSFET (Metal Oxide)	Logic Level Gate
Alpha & Omega Semiconductor Inc. AO4627	50 mOhm	210 pF	5 nC	2 VA	30 V	8-SOIC	N P-Channel	Surface Mount	0.154 in	3.9 mm	-55 °C	150 °C	2.5 V	MOSFET (Metal Oxide)	Logic Level Gate	3.5 A	4.5 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

3D models and CAD resources for this part

General part information

Mosfet Array 30V 4.5A, 3.5A 2W Surface Mount 8-SOIC

Technical documentation and resources