Discrete Semiconductor Products

IRLIZ14GPBF

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MOSFET N-CH 60V 8A TO220-3

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Discrete Semiconductor Products

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MOSFET N-CH 60V 8A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	IRLIZ14GPBF

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	5 V, 4 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	8.4 nC
Input Capacitance (Ciss) (Max) @ Vds	400 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack, Isolated Tab
Power Dissipation (Max)	27 W
Rds On (Max) @ Id, Vgs	200 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	2 V

Part	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Technology	Power Dissipation (Max)	Vgs (Max)	Mounting Type	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package
Vishay General Semiconductor - Diodes Division IRLIZ14GPBF	TO-220-3 Full Pack Isolated Tab	400 pF	200 mOhm	N-Channel	4 V 5 V	8 A	60 V	8.4 nC	MOSFET (Metal Oxide)	27 W	10 V	Through Hole	2 V	-55 °C	175 ░C	TO-220-3

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General part information

N-Channel 60 V 8A (Tc) 27W (Tc) Through Hole TO-220-3

Technical documentation and resources