Discrete Semiconductor Products

VS-90EPS08L-M3

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DIODE GEN PURP 800V 90A TO247AD

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Discrete Semiconductor Products

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DIODE GEN PURP 800V 90A TO247AD

Technical Specifications

Parameters and characteristics for this part

Specification	VS-90EPS08L-M3

Current - Average Rectified (Io)	90 A
Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	TO-247-2
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	TO-247AD
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	800 V
Voltage - Forward (Vf) (Max) @ If	1.2 V

Part	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If	Package / Case	Current - Average Rectified (Io)	Speed	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Technology	Supplier Device Package
Vishay General Semiconductor - Diodes Division VS-90EPS08L-M3	Through Hole	150 °C	-40 °C	1.2 V	TO-247-2	90 A	Standard Recovery >500ns	200 mA	800 V	100 µA	Standard	TO-247AD

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General part information

Diode 800 V 90A Through Hole TO-247AD

Technical documentation and resources