Discrete Semiconductor Products

SCS310APC9

Obsolete

SIC SCHOTTKY DIODES 3RD GEN SIC SCHOTTKY BR. DIODE 650V 10A

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Discrete Semiconductor Products

Obsolete

SIC SCHOTTKY DIODES 3RD GEN SIC SCHOTTKY BR. DIODE 650V 10A

Technical Specifications

Parameters and characteristics for this part

Specification	SCS310APC9

Capacitance @ Vr, F	500 pF
Current - Average Rectified (Io)	10 A
Current - Reverse Leakage @ Vr	50 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.5 V

Part	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If [Max]	Reverse Recovery Time (trr)	Mounting Type	Technology	Package / Case	Current - Reverse Leakage @ Vr	Speed	Operating Temperature - Junction [Max]	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]
Rohm Semiconductor SCS310APC9	10 A	1.5 V	0 ns	Through Hole	SiC (Silicon Carbide) Schottky	TO-220-2	50 µA	500 mA	175 ░C	500 pF	650 V

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General part information

SIC SCHOTTKY DIODES 3RD GEN SIC SCHOTTKY BR. DIODE 650V 10A

Technical documentation and resources

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