Discrete Semiconductor Products

HER305G-TP

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DIODE GEN PURP 400V 3A DO201AD

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Discrete Semiconductor Products

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DIODE GEN PURP 400V 3A DO201AD

Technical Specifications

Parameters and characteristics for this part

Specification	HER305G-TP

Capacitance @ Vr, F	80 pF
Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-201AD, Axial
Reverse Recovery Time (trr)	50 ns
Speed	500 ns, 200 mA
Supplier Device Package	DO-201AD
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	400 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.3 V

Part	Supplier Device Package	Mounting Type	Package / Case	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Speed	Technology	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If [Max]
MCC (Micro Commercial Components) HER305G-TP	DO-201AD	Through Hole	DO-201AD Axial	80 pF	400 V	-55 °C	150 °C	200 mA 500 ns	Standard	3 A	10 µA	50 ns	1.3 V
MCC (Micro Commercial Components) HER305G-TP	DO-201AD	Through Hole	DO-201AD Axial	80 pF	400 V	-55 °C	150 °C	200 mA 500 ns	Standard	3 A	10 µA	50 ns	1.3 V
MCC (Micro Commercial Components) HER305G-AP	DO-201AD	Through Hole	DO-201AD Axial	80 pF	400 V	-55 °C	150 °C	200 mA 500 ns	Standard	3 A	10 µA	50 ns	1.3 V
MCC (Micro Commercial Components) HER305G-AP	DO-201AD	Through Hole	DO-201AD Axial	80 pF	400 V	-55 °C	150 °C	200 mA 500 ns	Standard	3 A	10 µA	50 ns	1.3 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 400 V 3A Through Hole DO-201AD

Technical documentation and resources