NDH8502P

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MOSFET 2P-CH 30V 2.2A SUPERSOT8

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Discrete Semiconductor Products

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MOSFET 2P-CH 30V 2.2A SUPERSOT8

Technical Specifications

Parameters and characteristics for this part

Specification	NDH8502P

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	2.2 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs	14.5 nC
Input Capacitance (Ciss) (Max) @ Vds	340 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-TSOP
Package / Case	0.13 in
Package / Case [y]	3.3 mm
Power - Max [Max]	800 mW
Rds On (Max) @ Id, Vgs	110 mOhm
Supplier Device Package	SuperSOT™-8
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Technology	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Supplier Device Package	Package / Case [y]	Package / Case	Package / Case	Vgs(th) (Max) @ Id	Configuration	Mounting Type	Power - Max [Max]	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor NDH8502P	-55 °C	150 °C	14.5 nC	MOSFET (Metal Oxide)	110 mOhm	30 V	SuperSOT™-8	3.3 mm	8-TSOP	0.13 in	3 V	2 P-Channel	Surface Mount	800 mW	340 pF	2.2 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	468	$ 0.64

General part information

Mosfet Array 30V 2.2A (Ta) 800mW (Ta) Surface Mount SuperSOT™-8

Technical documentation and resources

No documents available