Discrete Semiconductor Products

RJK0353DPA-01#J0B

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NCH POWER MOSFET 30V 35A 5.2MOHM POWER SON-8 5X6

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Discrete Semiconductor Products

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NCH POWER MOSFET 30V 35A 5.2MOHM POWER SON-8 5X6

Technical Specifications

Parameters and characteristics for this part

Specification	RJK0353DPA-01#J0B

Current - Continuous Drain (Id) @ 25°C	35 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	14 nC
Input Capacitance (Ciss) (Max) @ Vds	2180 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-PowerWDFN
Power Dissipation (Max)	40 W
Rds On (Max) @ Id, Vgs	5.2 mOhm
Supplier Device Package	8-WPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Package / Case	Technology	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	FET Type	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Mounting Type	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)
Renesas Electronics Corporation RJK0353DPA-01#J0B	8-PowerWDFN	MOSFET (Metal Oxide)	35 A	20 V	N-Channel	8-WPAK	2180 pF	150 °C	14 nC	30 V	Surface Mount	40 W	2.5 V	5.2 mOhm	4.5 V 10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness.

Technical documentation and resources