Discrete Semiconductor Products

MSJP11N65A-BP

Active

N-CHANNEL MOSFET,TO-220

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

N-CHANNEL MOSFET,TO-220

Technical Specifications

Parameters and characteristics for this part

Specification	MSJP11N65A-BP

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	21 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	83.3 W
Rds On (Max) @ Id, Vgs	380 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Mounting Type	Rds On (Max) @ Id, Vgs	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Vgs (Max)	Technology	Package / Case	Power Dissipation (Max) [Max]
Micro Commercial Components MSJP11N65-BP	10 V	650 V	11 A	4 V	Through Hole	380 mOhm	TO-220AB (H)	21 nC	78 W	-55 °C	150 °C	901 pF	N-Channel	30 V	MOSFET (Metal Oxide)	TO-220-3
Micro Commercial Components MSJP11N65A-BP	10 V	650 V	11 A	4 V	Through Hole	380 mOhm	TO-220AB	21 nC		-55 °C	150 °C		N-Channel	30 V	MOSFET (Metal Oxide)	TO-220-3	83.3 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 650 V 11A 83.3W (Tc) Through Hole TO-220AB

Technical documentation and resources