Discrete Semiconductor Products

SQD97N06-6M3L_GE3

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MOSFET N-CH 60V 97A TO252AA

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Discrete Semiconductor Products

Active

MOSFET N-CH 60V 97A TO252AA

Technical Specifications

Parameters and characteristics for this part

Specification	SQD97N06-6M3L_GE3

Current - Continuous Drain (Id) @ 25°C	97 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	125 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	6060 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	136 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	6.3 mOhm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Qualification	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Supplier Device Package	Grade	Technology	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Package / Case	Drive Voltage (Max Rds On, Min Rds On)
Vishay General Semiconductor - Diodes Division SQD97N06-6M3L_GE3	125 nC	60 V	136 W	N-Channel	6060 pF	6.3 mOhm	AEC-Q101	20 V	-55 °C	175 ░C	2.5 V	TO-252AA	Automotive	MOSFET (Metal Oxide)	97 A	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	4.5 V 10 V

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General part information

N-Channel 60 V 97A (Tc) 136W (Tc) Surface Mount TO-252AA

Technical documentation and resources