Discrete Semiconductor Products

RJK0328DPB-01#J0

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MOSFET N-CH 30V 60A LFPAK

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Discrete Semiconductor Products

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MOSFET N-CH 30V 60A LFPAK

Technical Specifications

Parameters and characteristics for this part

Specification	RJK0328DPB-01#J0

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	42 nC
Input Capacitance (Ciss) (Max) @ Vds	6380 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-669, SC-100
Power Dissipation (Max)	65 W
Rds On (Max) @ Id, Vgs	2.1 mOhm
Supplier Device Package	LFPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.5 V

Part	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	FET Type	Operating Temperature	Technology	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id [Max]	Supplier Device Package	Package / Case	Mounting Type
Renesas Electronics Corporation RJK0328DPB-01#J0	60 A	20 V	65 W	30 V	N-Channel	150 °C	MOSFET (Metal Oxide)	2.1 mOhm	6380 pF	4.5 V 10 V	42 nC	2.5 V	LFPAK	SC-100 SOT-669	Surface Mount

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General part information

N-Channel 30 V 60A (Ta) 65W (Tc) Surface Mount LFPAK

Technical documentation and resources