Discrete Semiconductor Products

MBR400200CT

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GeneSiC Semiconductor

DIODE MOD SCHOT 200V 200A 2TOWER

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Discrete Semiconductor Products

Active

GeneSiC Semiconductor

DIODE MOD SCHOT 200V 200A 2TOWER

Technical Specifications

Parameters and characteristics for this part

Specification	MBR400200CT

Current - Average Rectified (Io) (per Diode)	200 A
Current - Reverse Leakage @ Vr	3 mA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	Twin Tower
Speed	200 mA, 500 ns
Supplier Device Package	Twin Tower
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	920 mV

Part	Mounting Type	Speed	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io) (per Diode)	Supplier Device Package	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Package / Case	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Diode Configuration
GeneSiC Semiconductor MBR400200CTR	Chassis Mount	200 mA 500 ns	3 mA	200 A	Twin Tower	150 °C	-55 °C	Schottky	Twin Tower	920 mV	200 V	1 Pair Common Anode
GeneSiC Semiconductor MBR400200CT	Chassis Mount	200 mA 500 ns	3 mA	200 A	Twin Tower	150 °C	-55 °C	Schottky	Twin Tower	920 mV	200 V	1 Pair Common Cathode

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	80	$ 82.40

General part information

Diode Array 1 Pair Common Cathode 200 V 200A Chassis Mount Twin Tower

Technical documentation and resources