Discrete Semiconductor Products

EKG1020

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LOW RON MOSFET 100V/20A/0.033

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Discrete Semiconductor Products

Active

LOW RON MOSFET 100V/20A/0.033

Technical Specifications

Parameters and characteristics for this part

Specification	EKG1020

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	45 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2200 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power Dissipation (Max)	55 W
Rds On (Max) @ Id, Vgs	12.5 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Vgs (Max)	Package / Case	Supplier Device Package	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)
Sanken Electric USA Inc. EKG1020	N-Channel	4.5 V 10 V	MOSFET (Metal Oxide)	2.5 V	12.5 mOhm	20 V	TO-220-3	TO-220-3	150 °C	20 A	45 nC	Through Hole	55 W	2200 pF	100 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

N-Channel 100 V 20A (Ta) 55W (Tc) Through Hole TO-220-3

Technical documentation and resources