Discrete Semiconductor Products

SIZ700DT-T1-GE3

Obsolete

MOSFET 2N-CH 20V 16A 6POWERPAIR

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Discrete Semiconductor Products

Obsolete

MOSFET 2N-CH 20V 16A 6POWERPAIR

Technical Specifications

Parameters and characteristics for this part

Specification	SIZ700DT-T1-GE3

Configuration	2 N-Channel (Half Bridge)
Current - Continuous Drain (Id) @ 25°C	16 A
Drain to Source Voltage (Vdss)	20 V
Gate Charge (Qg) (Max) @ Vgs	35 nC
Input Capacitance (Ciss) (Max) @ Vds	1300 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-PowerPair™
Power - Max	2.36 W, 2.8 W
Rds On (Max) @ Id, Vgs	8.6 mOhm
Supplier Device Package	6-PowerPair™
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id [Max]	2.2 V

Part	Configuration	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Technology	Power - Max	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Supplier Device Package	Vgs(th) (Max) @ Id [Max]	Package / Case	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C
Vishay General Semiconductor - Diodes Division SIZ700DT-T1-GE3	2 N-Channel (Half Bridge)	35 nC	8.6 mOhm	MOSFET (Metal Oxide)	2.36 W 2.8 W	-55 °C	150 °C	20 V	6-PowerPair™	2.2 V	6-PowerPair™	Surface Mount	1300 pF	16 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 20V 16A 2.36W, 2.8W Surface Mount 6-PowerPair™

Technical documentation and resources