Specification	2SC5200-O(S1,F

Current - Collector (Ic) (Max) [Max]	15 A
Current - Collector Cutoff (Max) [Max]	5 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	55
Frequency - Transition	30 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-3PL
Power - Max [Max]	150 W
Supplier Device Package	TO-3P(L)
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	3 V
Voltage - Collector Emitter Breakdown (Max) [Max]	230 V

2SC5200 Series

Bipolar Transistors, NPN Bipolar Transistor, 230 V, 15 A, TO-3P(L)

Part	Operating Temperature	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Frequency - Transition	Transistor Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Package / Case	Current - Collector (Ic) (Max) [Max]	Mounting Type	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
Toshiba Semiconductor and Storage 2SC5200-O(S1,F	150 °C	5 µA	150 W	30 MHz	NPN	230 V	TO-3P(L)	TO-3PL	15 A	Through Hole	3 V	55

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar Transistors, NPN Bipolar Transistor, 230 V, 15 A, TO-3P(L)

Technical documentation and resources