Discrete Semiconductor Products

SI7726DN-T1-GE3

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MOSFET N-CH 30V 35A PPAK1212-8

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Discrete Semiconductor Products

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MOSFET N-CH 30V 35A PPAK1212-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7726DN-T1-GE3

Current - Continuous Drain (Id) @ 25°C	35 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	43 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1765 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-50 °C
Package / Case	PowerPAK® 1212-8
Power Dissipation (Max)	52 W, 3.8 W
Rds On (Max) @ Id, Vgs	9.5 mOhm
Supplier Device Package	PowerPAK® 1212-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.6 V

Part	Vgs (Max)	Vgs(th) (Max) @ Id	Package / Case	Mounting Type	FET Type	Rds On (Max) @ Id, Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Technology
Vishay General Semiconductor - Diodes Division SI7726DN-T1-GE3	20 V	2.6 V	PowerPAK® 1212-8	Surface Mount	N-Channel	9.5 mOhm	150 °C	-50 °C	30 V	3.8 W 52 W	4.5 V 10 V	43 nC	PowerPAK® 1212-8	1765 pF	35 A	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 35A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

Technical documentation and resources