Discrete Semiconductor Products

PSMNR98-25YLEX

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PSMNR98-25YLE/SOT669/LFPAK

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Discrete Semiconductor Products

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PSMNR98-25YLE/SOT669/LFPAK

Technical Specifications

Parameters and characteristics for this part

Specification	PSMNR98-25YLEX

Current - Continuous Drain (Id) @ 25°C	255 A
Drain to Source Voltage (Vdss)	25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	98 nC
Input Capacitance (Ciss) (Max) @ Vds	6249 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-669, SC-100
Power Dissipation (Max)	192 W
Rds On (Max) @ Id, Vgs	1.11 mOhm
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.2 V

Part	Technology	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id [Max]	Vgs (Max)	FET Type	Package / Case	Mounting Type
Freescale Semiconductor - NXP PSMNR98-25YLEX	MOSFET (Metal Oxide)	1.11 mOhm	192 W	6249 pF	255 A	98 nC	LFPAK56 Power-SO8	25 V	-55 °C	175 ░C	2.2 V	20 V	N-Channel	SC-100 SOT-669	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 25 V 255A (Tc) 192W (Tc) Surface Mount LFPAK56, Power-SO8

Technical documentation and resources