Discrete Semiconductor Products

PHM18NQ15T,518

Obsolete

MOSFET N-CH 150V 19A 8HVSON

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 150V 19A 8HVSON

Technical Specifications

Parameters and characteristics for this part

Specification	PHM18NQ15T,518

Current - Continuous Drain (Id) @ 25°C	19 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	26.4 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-VDFN Exposed Pad
Power Dissipation (Max) [Max]	62.5 W
Rds On (Max) @ Id, Vgs	75 mOhm
Supplier Device Package	8-HVSON (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Technology	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Mounting Type	Package / Case	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Gate Charge (Qg) (Max) @ Vgs	FET Type	Vgs (Max)	Supplier Device Package	Power Dissipation (Max) [Max]
Freescale Semiconductor - NXP PHM18NQ15T,518	MOSFET (Metal Oxide)	19 A	75 mOhm	Surface Mount	8-VDFN Exposed Pad	150 V	-55 °C	150 °C	10 V	5 V	26.4 nC	N-Channel	20 V	8-HVSON (5x6)	62.5 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 150 V 19A (Tc) 62.5W (Tc) Surface Mount 8-HVSON (5x6)

Technical documentation and resources