Discrete Semiconductor Products

SI7423DN-T1-E3

LTB

MOSFET P-CH 30V 7.4A PPAK1212-8

Search across all available documentation for this part.

Discrete Semiconductor Products

LTB

MOSFET P-CH 30V 7.4A PPAK1212-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7423DN-T1-E3

Current - Continuous Drain (Id) @ 25°C	7.4 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	56 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8
Power Dissipation (Max)	1.5 W
Rds On (Max) @ Id, Vgs [Max]	18 mOhm
Supplier Device Package	PowerPAK® 1212-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Package / Case	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Technology	FET Type	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Mounting Type	Supplier Device Package	Rds On (Max) @ Id, Vgs [Max]
Vishay General Semiconductor - Diodes Division SI7423DN-T1-GE3	PowerPAK® 1212-8	7.4 A	1.5 W	56 nC	-55 °C	150 °C	30 V	MOSFET (Metal Oxide)	P-Channel	20 V	4.5 V 10 V	3 V	Surface Mount	PowerPAK® 1212-8	18 mOhm
Vishay General Semiconductor - Diodes Division SI7423DN-T1-E3	PowerPAK® 1212-8	7.4 A	1.5 W	56 nC	-55 °C	150 °C	30 V	MOSFET (Metal Oxide)	P-Channel	20 V	4.5 V 10 V	3 V	Surface Mount	PowerPAK® 1212-8	18 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 30 V 7.4A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

Technical documentation and resources