SQJB60EP-T2_GE3

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MOSFET 2N-CH 60V 30A PPAK SO8

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Discrete Semiconductor Products

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MOSFET 2N-CH 60V 30A PPAK SO8

Technical Specifications

Parameters and characteristics for this part

Specification	SQJB60EP-T2_GE3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	60 V
Gate Charge (Qg) (Max) @ Vgs [Max]	30 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1600 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8 Dual
Power - Max	48 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	12 mOhm
Supplier Device Package	PowerPAK® SO-8 Dual
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

Part	Qualification	Grade	Configuration	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Supplier Device Package	Package / Case	Rds On (Max) @ Id, Vgs	Technology	Power - Max	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]
Vishay General Semiconductor - Diodes Division SQJB60EP-T2_GE3	AEC-Q101	Automotive	2 N-Channel (Dual)	1600 pF	60 V	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual	12 mOhm	MOSFET (Metal Oxide)	48 W	30 nC	2.5 V	30 A	Surface Mount	-55 °C	175 ░C

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General part information

Mosfet Array 60V 30A (Tc) 48W (Tc) Surface Mount PowerPAK® SO-8 Dual

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