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Technical Specifications
Parameters and characteristics for this part
| Specification | QH8JA1TCR |
|---|---|
| Configuration | 2 P-Channel (Dual) |
| Current - Continuous Drain (Id) @ 25°C | 5 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.2 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 720 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Power - Max [Max] | 1.5 W |
| Rds On (Max) @ Id, Vgs | 38 mOhm |
| Supplier Device Package | TSMT8 |
| Vgs(th) (Max) @ Id | 1.2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
QH8JA1 Series
The Middle Power MOSFET QH8JA1 is suitable for switching applications.
Documents
Technical documentation and resources