Discrete Semiconductor Products

PHB38N02LT,118

Obsolete

MOSFET N-CH 20V 44.7A D2PAK

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 20V 44.7A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	PHB38N02LT,118

Current - Continuous Drain (Id) @ 25°C	44.7 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	2.5 V, 5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	15.1 nC
Input Capacitance (Ciss) (Max) @ Vds	800 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	57.6 W
Rds On (Max) @ Id, Vgs	16 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	12 V
Vgs(th) (Max) @ Id	1.5 V

Part	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Vgs (Max) [Max]	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Power Dissipation (Max)	Mounting Type
Freescale Semiconductor - NXP PHB38N02LT,118	44.7 A	800 pF	2.5 V 5 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V	1.5 V	12 V	N-Channel	-55 °C	175 ░C	16 mOhm	D2PAK	15.1 nC	MOSFET (Metal Oxide)	57.6 W	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 20 V 44.7A (Tc) 57.6W (Tc) Surface Mount D2PAK

Technical documentation and resources