Discrete Semiconductor Products

PMDPB30XNZ

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TRANS MOSFET N-CH 20V 4A 6-PIN HUSON EP T/R

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Discrete Semiconductor Products

Active

TRANS MOSFET N-CH 20V 4A 6-PIN HUSON EP T/R

Technical Specifications

Parameters and characteristics for this part

Specification	PMDPB30XNZ

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	20 V
Input Capacitance (Ciss) (Max) @ Vds [Max]	660 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-UFDFN Exposed Pad
Power - Max	490 mW, 8.33 W
Supplier Device Package	6-HUSON (2x2)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	900 mV

Part	Power - Max	Technology	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id	Supplier Device Package	Configuration
Nexperia USA Inc. PMDPB30XNZ	8.33 W 490 mW	MOSFET (Metal Oxide)	6-UFDFN Exposed Pad	660 pF	4 A	20 V	Surface Mount	150 °C	-55 °C	900 mV	6-HUSON (2x2)	2 N-Channel (Dual)

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General part information

Mosfet Array 20V 4A (Ta) 490mW (Ta), 8.33W (Tc) Surface Mount 6-HUSON (2x2)

Technical documentation and resources