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APTSM120AM08CT6AG
Discrete Semiconductor Products

APTSM120AM08CT6AG

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Microsemi Corporation

SIC 2N-CH 1200V 370A SP6

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APTSM120AM08CT6AG
Discrete Semiconductor Products

APTSM120AM08CT6AG

Active
Microsemi Corporation

SIC 2N-CH 1200V 370A SP6

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationAPTSM120AM08CT6AG
Configuration2 N-Channel (Dual), Schottky
Drain to Source Voltage (Vdss)1.2 kV
Drain to Source Voltage (Vdss)1200 V
Gate Charge (Qg) (Max) @ Vgs1360 nC
Mounting TypeChassis Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-40 °C
Package / CaseSP6
Power - Max [Max]2300 W
Rds On (Max) @ Id, Vgs10 mOhm
Supplier Device PackageSP6
TechnologySilicon Carbide (SiC)
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.00

Description

General part information

APTSM120 Series

Mosfet Array 1200V (1.2kV) 370A (Tc) 2300W Chassis Mount SP6

Documents

Technical documentation and resources