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SCT4026DW7HRTL
Discrete Semiconductor Products

SCT4026DW7TL

Active
Rohm Semiconductor

SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 51 A, 750 V, 0.026 OHM, TO-263

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsSolving the challenges of driving SiC MOSFETs with new packaging developmentsLEADRIVE: Design, Test and System Evaluation of Silicon Carbide Power Modules and Motor Control Units+69
SCT4026DW7HRTL
Discrete Semiconductor Products

SCT4026DW7TL

Active
Rohm Semiconductor

SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 51 A, 750 V, 0.026 OHM, TO-263

Deep-Dive with AI

DocumentsSolving the challenges of driving SiC MOSFETs with new packaging developmentsLEADRIVE: Design, Test and System Evaluation of Silicon Carbide Power Modules and Motor Control Units+69

Technical Specifications

Parameters and characteristics for this part

SpecificationSCT4026DW7TL
Current - Continuous Drain (Id) @ 25°C51 A
Drain to Source Voltage (Vdss)750 V
Drive Voltage (Max Rds On, Min Rds On)18 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs94 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]2320 pF
Mounting TypeSurface Mount
Operating Temperature175 °C
Package / CaseTO-263CA, D2PAK (7 Leads + Tab), TO-263-8
Power Dissipation (Max)150 W
Rds On (Max) @ Id, Vgs34 mOhm
Supplier Device PackageTO-263-7L
Vgs (Max) [Max]21 V
Vgs (Max) [Min]-4 V
Vgs(th) (Max) @ Id4.8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 19.27
10$ 16.98
100$ 14.68
500$ 13.31
Digi-Reel® 1$ 19.27
10$ 16.98
100$ 14.68
500$ 13.31
N/A 638$ 16.97
Tape & Reel (TR) 1000$ 5.84
MouserN/A 1$ 17.40
10$ 13.95
50$ 13.94
100$ 11.44
1000$ 11.24
NewarkEach (Supplied on Cut Tape) 1$ 18.10
10$ 14.51
25$ 14.51
50$ 14.50
100$ 11.81
250$ 11.62
500$ 11.41
1000$ 10.15

Description

General part information

SCT4026DW7 Series

SCT4026DW7 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.

Documents

Technical documentation and resources

Solving the challenges of driving SiC MOSFETs with new packaging developments

White Paper

LEADRIVE: Design, Test and System Evaluation of Silicon Carbide Power Modules and Motor Control Units

White Paper

Notes on Gate Drive Voltage Setting and Linear Mode Application of SiC MOSFET

Technical Article

Notes for Temperature Measurement Using Thermocouples

Thermal Design

New SPICE Models with Improved Simulation Speed for Power Semiconductors Are Released!

White Paper

Precautions When Measuring the Rear of the Package with a Thermocouple

Thermal Design

Thermal Characterization Guidelines for ROHM's 4th Generation SiC MOSFETs

Thermal Design

Moisture Sensitivity Level

Package Information

Method for Monitoring Switching Waveform

Schematic Design & Verification

5kW High-Efficiency Fan-less Inverter

Schematic Design & Verification

Basics and Design Guidelines for Gate Drive Circuits

Schematic Design & Verification

Snubber circuit design methods for SiC MOSFET

Schematic Design & Verification

Judgment Criteria of Thermal Evaluation

Thermal Design

Condition of Soldering

Package Information

Gate-Source Voltage Surge Suppression Methods

Schematic Design & Verification

Two-Resistor Model for Thermal Simulation

Thermal Design

Generation Mechanism of Voltage Surge on Commutation Side (Basic)

Technical Article

How to Use Thermal Models

Thermal Design

Application Note for SiC Power Devices and Modules

Schematic Design & Verification

4 Steps for Successful Thermal Designing of Power Devices

White Paper

800V Three-Phase Output LLC DC/DC Resonant Converter

Schematic Design & Verification

How to Use LTspice® Models: Tips for Improving Convergence

Schematic Design & Verification

How to Use LTspice® Models

Schematic Design & Verification

Measurement Method and Usage of Thermal Resistance RthJC

Thermal Design

PCB Layout Thermal Design Guide

Thermal Design

4<sup>th</sup> Gen SiC MOSFETs Discrete Package: Characteristics and Precautions for Circuit Design Application Note

Schematic Design & Verification

TO-263-7L Explanation for Marking

Package Information

How to measure the oscillation occurs between parallel-connected devices

Technical Article

Notes for Calculating Power Consumption:Static Operation

Thermal Design

Design Method for Comparator-less Miller Clamp Circuits

Schematic Design & Verification

Best practices for the connection of Driver Source/Emitter terminals in discrete devices

Schematic Design & Verification

How to Use the Thermal Resistance and Thermal Characteristics Parameters

Thermal Design

θ<sub>JA</sub> and Ψ<sub>JT</sub>

Thermal Design

About Flammability of Materials

Environmental Data

Application Benefits of Using 4<sup>th</sup> Generation SiC MOSFETs

Technical Article

TO-263-7L Inner Structure

Package Information

Types and Features of Transistors

Application Note

Basics of Thermal Resistance and Heat Dissipation

Thermal Design

Calculating Power Loss from Measured Waveforms

Schematic Design & Verification

Thermal Resistance Measurement Method for SiC MOSFET

Thermal Design

How to Use PLECS Models

Technical Article

Oscillation countermeasures for MOSFETs in parallel

Schematic Design & Verification

θ<sub>JC</sub> and Ψ<sub>JT</sub>

Thermal Design

SCT4026DW7 Data Sheet

Data Sheet

Improvement of switching loss by driver source

Technical Article

Compliance of the ELV directive

Environmental Data

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

Thermal Design

Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials

Thermal Design

Part Explanation

Application Note

Gate-source voltage behaviour in a bridge configuration

Schematic Design & Verification

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

How to Suppress the Parallel Drive Oscillation in SiC Modules

Application Note

The Problem with Traditional Vaccine Storage Freezers and How ROHM Cutting-edge Power Solutions Can Take them to the Next Level

White Paper

Cutting-Edge Web Simulation Tool "ROHM Solution Simulator" Capable of Complete Circuit Verification of Power Devices and Driver ICs

White Paper

TO-263-7L Taping Information

Package Information

Notes for Temperature Measurement Using Forward Voltage of PN Junction

Thermal Design

What Is Thermal Design

Thermal Design

About Export Administration Regulations (EAR)

Export Information

SiC MOSFET Layout Design Considerations

Technical Article

TO-263-7L Package Dimensions

Package Information

Anti-Whisker formation

Package Information

Precautions during gate-source voltage measurement for SiC MOSFET

Schematic Design & Verification

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification

Simulation Verification to Identify Oscillation between Parallel Dies during Design Phase of Power Modules

Technical Article

5kW Inverter Circuit Using 4th Generation SiC MOSFETs

Schematic Design & Verification

Precautions for Thermal Resistance of Insulation Sheet

Thermal Design

Power Eco Family: Overview of ROHM's Power Semiconductor Lineup

White Paper

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article

Calculation of Power Dissipation in Switching Circuit

Schematic Design & Verification

What is a Thermal Model? (SiC Power Device)

Thermal Design

How to Use PSIM Models

Schematic Design & Verification