Discrete Semiconductor Products

BD17810STU

Obsolete

TRANS PNP 60V 3A TO-126-3

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Discrete Semiconductor Products

Obsolete

TRANS PNP 60V 3A TO-126-3

Technical Specifications

Parameters and characteristics for this part

Specification	BD17810STU

Current - Collector (Ic) (Max) [Max]	3 A
Current - Collector Cutoff (Max) [Max]	100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	63 hFE
Frequency - Transition	3 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-225AA, TO-126-3
Power - Max [Max]	30 W
Supplier Device Package	TO-126-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	800 mV
Voltage - Collector Emitter Breakdown (Max)	60 V

Part	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]	Transistor Type	Supplier Device Package	Operating Temperature	Voltage - Collector Emitter Breakdown (Max)	Package / Case	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Frequency - Transition
ON Semiconductor BD17810STU	3 A	100 µA	800 mV	30 W	PNP	TO-126-3	150 °C	60 V	TO-126-3 TO-225AA	Through Hole	63 hFE	3 MHz

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor PNP 60 V 3 A 3MHz 30 W Through Hole TO-126-3

Technical documentation and resources