Discrete Semiconductor Products

SIHG73N60AEL-GE3

Obsolete

MOSFET N-CH 600V 69A TO247AC

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 600V 69A TO247AC

Technical Specifications

Parameters and characteristics for this part

Specification	SIHG73N60AEL-GE3

Current - Continuous Drain (Id) @ 25°C	69 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	342 nC
Input Capacitance (Ciss) (Max) @ Vds	6709 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	520 W
Supplier Device Package	TO-247AC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Technology	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	FET Type	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Vgs (Max)	Package / Case
Vishay General Semiconductor - Diodes Division SIHG73N60AEL-GE3	600 V	69 A	520 W	MOSFET (Metal Oxide)	10 V	TO-247AC	N-Channel	4 V	6709 pF	-55 °C	150 °C	342 nC	Through Hole	30 V	TO-247-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 69A (Tc) 520W (Tc) Through Hole TO-247AC

Technical documentation and resources