Discrete Semiconductor Products

2SK2109-T1-AZ

Obsolete

2SK2109-T1-AZ - N-CHANNEL MOS FE

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Discrete Semiconductor Products

Obsolete

2SK2109-T1-AZ - N-CHANNEL MOS FE

Technical Specifications

Parameters and characteristics for this part

Specification	2SK2109-T1-AZ

Current - Continuous Drain (Id) @ 25°C	500 mA
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	111 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-243AA
Power Dissipation (Max)	2 W
Rds On (Max) @ Id, Vgs	800 mOhm
Supplier Device Package	SC-62
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Power MOSFETs for Automotive

Part	Package / Case	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Power Dissipation (Max)	Supplier Device Package	Vgs (Max)	FET Type	Technology	Mounting Type	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C
Renesas Electronics Corporation 2SK2109-T1-AZ	TO-243AA	60 V	4 V	10 V	2 W	SC-62	20 V	N-Channel	MOSFET (Metal Oxide)	Surface Mount	800 mOhm	2 V	150 °C	111 pF	500 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	6956	$ 0.56

General part information

Power MOSFETs for Automotive

Technical documentation and resources