Discrete Semiconductor Products

HGTG12N60B3

Obsolete

ON Semiconductor

IGBT 600V 27A 104W TO247

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Discrete Semiconductor Products

HGTG12N60B3

Obsolete

ON Semiconductor

IGBT 600V 27A 104W TO247

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DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	HGTG12N60B3

Current - Collector (Ic) (Max) [Max]	27 A
Current - Collector Pulsed (Icm)	110 A
Gate Charge	51 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	104 W
Supplier Device Package	TO-247-3
Switching Energy	250 µJ, 150 µJ
Td (on/off) @ 25°C	26 ns
Td (on/off) @ 25°C	150 ns
Test Condition	480 V, 12 A, 15 V, 25 Ohm
Vce(on) (Max) @ Vge, Ic	2.1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

HGTG12N60A4D Series

24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce(on) (Max) @ Vge, Ic	Package / Case	Reverse Recovery Time (trr)	Mounting Type	Current - Collector Pulsed (Icm)	Operating Temperature [Max]	Operating Temperature [Min]	Current - Collector (Ic) (Max) [Max]	Switching Energy	Power - Max [Max]	Supplier Device Package	Gate Charge	Current - Collector (Ic) (Max)	Test Condition	Td (on/off) @ 25°C	Td (on/off) @ 25°C
ON Semiconductor HGTG12N60C3D	600 V	2.2 V	TO-247-3	42 ns	Through Hole	96 A	150 °C	-40 °C	24 A	380 µJ 900 µJ	104 W	TO-247-3
ON Semiconductor HGTG12N60A4D	600 V	2.7 V	TO-247-3	30 ns	Through Hole	96 A	150 °C	-55 °C		50 µJ 55 µJ	167 W	TO-247-3	78 nC	54 A	10 Ohm 12 A 15 V 390 V	17 ns 96 ns
ON Semiconductor HGTG12N60B3	600 V	2.1 V	TO-247-3		Through Hole	110 A	150 °C	-55 °C	27 A	150 µJ 250 µJ	104 W	TO-247-3	51 nC		12 A 15 V 25 Ohm 480 V	26 ns	150 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

HGTG12N60A4D Series

The HGTG12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage dorp varies only moderately 25°C and 150°C. The IBGT used is the development type TA49123. The diode in anti parallel with the IGBT is the development type TA49061.The IGBT is ideal for mant high voltage switching applications operating at moderate frquencies where low conduction losses are essential.Formerly Developmental Type TA49117.

Documents

Technical documentation and resources