Discrete Semiconductor Products
BZT03C10-TAP
ActiveVishay General Semiconductor - Diodes Division
TVS DIODE 8.2VWM 14.8VC SOD57
Deep-Dive with AI
Search across all available documentation for this part.
DocumentsDatasheet
Discrete Semiconductor Products
BZT03C10-TAP
ActiveVishay General Semiconductor - Diodes Division
TVS DIODE 8.2VWM 14.8VC SOD57
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | BZT03C10-TAP |
|---|---|
| Current - Reverse Leakage @ Vr | 10 µA |
| Impedance (Max) (Zzt) [Max] | 4 Ohms |
| Mounting Type | Through Hole |
| Operating Temperature | 175 °C |
| Package / Case | SOD-57, Axial |
| Power - Max [Max] | 1.3 W |
| Supplier Device Package | SOD-57 |
| Tolerance | 6 % |
| Voltage - Forward (Vf) (Max) @ If | 1.2 V |
| Voltage - Zener (Nom) (Vz) | 10 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.23 | |
| Tape & Box (TB) | 25000 | $ 0.23 | ||
Description
General part information
BZT03C10 Series
Zener Diode 10 V 1.3 W ±6% Through Hole SOD-57
Documents
Technical documentation and resources