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Technical Specifications
Parameters and characteristics for this part
| Specification | MBT35200MT2G |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 2 A |
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 100 |
| Frequency - Transition | 100 MHz |
| Mounting Type | Surface Mount |
| Package / Case | TSOT-23-6, SOT-23-6 Thin |
| Power - Max [Max] | 625 mW |
| Supplier Device Package | 6-TSOP |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic [Max] | 310 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 35 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
MBT35200 Series
Low VCE(sat)Bipolar Transistors are miniature surface mount devices featuring ultra low saturation voltage VCE(sat)and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.
Documents
Technical documentation and resources
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