littelfuse-power-semiconductor_SMPD-B_X030a

Discrete Semiconductor Products

MCB40P1200LB-TUB

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LITTELFUSE

MOSFET MODULES SIC MOSFET PHASELEG 25MO SMPD-B

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Discrete Semiconductor Products

MCB40P1200LB-TUB

Active

LITTELFUSE

MOSFET MODULES SIC MOSFET PHASELEG 25MO SMPD-B

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	MCB40P1200LB-TUB

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	58 A, 55 A
Drain to Source Voltage (Vdss)	1.2 kV
Drain to Source Voltage (Vdss)	1200 V
Gate Charge (Qg) (Max) @ Vgs	161 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2790 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 C
Package / Case	9-SMD Power Module
Rds On (Max) @ Id, Vgs [Max]	34 mOhm
Supplier Device Package	SMPD
Technology	Silicon Carbide (SiC)
Vgs(th) (Max) @ Id	4 V

MCB40P1200LB Series

Part	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Package / Case	Rds On (Max) @ Id, Vgs [Max]	Supplier Device Package	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Configuration	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]
LITTELFUSE MCB40P1200LB-TUB	55 A 58 A	2790 pF	Silicon Carbide (SiC)	161 nC	Surface Mount	9-SMD Power Module	34 mOhm	SMPD	1.2 kV	1200 V	2 N-Channel (Dual)	4 V	-55 C	150 °C
LITTELFUSE MCB40P1200LB-TRR	55 A	2790 pF	Silicon Carbide (SiC)	161 nC	Surface Mount	9-PowerSMD	34 mOhm	9-SMPD-B	1.2 kV	1200 V	2 N-Channel (Dual)	4 V	-55 C	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+
	Tube	20	$ 190.47	1m+
Mouser	N/A	1	$ 218.53	1m+
		10	$ 204.67

Description

General part information

MCB40P1200LB Series

1200V, 25mΩ SiC MOSFETs in a phase leg configuration, built in a top side. Thanks to the characteristics of the SiC material, this product delivers performance in terms of switching speed and low switching losses as compared to silicon mosfets in the same voltage class. It is recommended for use in high speed, high voltage industrial switch mode power supplies where low power losses, high switching speed and high power density are important requirements.

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Technical documentation and resources