Discrete Semiconductor Products
RQ3N060ATTB1
ActiveRohm Semiconductor
MOSFET, P-CHANNEL, 80V, 18A, HSMT ROHS COMPLIANT: YES
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Search across all available documentation for this part.
Discrete Semiconductor Products
RQ3N060ATTB1
ActiveRohm Semiconductor
MOSFET, P-CHANNEL, 80V, 18A, HSMT ROHS COMPLIANT: YES
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | RQ3N060ATTB1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 18 A, 6 A |
| Drain to Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 6 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 2240 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 8-PowerVDFN |
| Power Dissipation (Max) | 2 W, 20 W |
| Rds On (Max) @ Id, Vgs | 52 mOhm |
| Supplier Device Package [custom] | 8-HSMT |
| Supplier Device Package [x] | 3.2 |
| Supplier Device Package [y] | 3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
RQ3N060AT Series
RQ3N060AT is a power MOSFET with low-on resistance and High power package, suitable for Switching and Motor drives applications.
Documents
Technical documentation and resources