Discrete Semiconductor Products

PJT7802_S1_00001

NRND

MOSFETS 20V N-CHANNEL ENHANCEMENT MODE MOSFETESD PROTECTED

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Discrete Semiconductor Products

NRND

MOSFETS 20V N-CHANNEL ENHANCEMENT MODE MOSFETESD PROTECTED

Technical Specifications

Parameters and characteristics for this part

Specification	PJT7802_S1_00001

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	500 mA
Drain to Source Voltage (Vdss)	20 V
Gate Charge (Qg) (Max) @ Vgs	0.9 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	39 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-363, SC-88, 6-TSSOP
Power - Max [Max]	350 mW
Rds On (Max) @ Id, Vgs [Max]	400 mOhm
Supplier Device Package	SOT-363
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	Operating Temperature [Max]	Operating Temperature [Min]	Configuration	Drain to Source Voltage (Vdss)	Qualification	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Power - Max [Max]	Grade	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id
Panjit International Inc. PJT7802-AU_R1_000A1	150 °C	-55 °C	2 N-Channel (Dual)	20 V	AEC-Q101	0.9 nC	Surface Mount	350 mW	Automotive	6-TSSOP SC-88 SOT-363	39 pF	MOSFET (Metal Oxide)	500 mA	SOT-363	400 mOhm	1 V
Panjit International Inc. PJT7802_R1_00001	150 °C	-55 °C	2 N-Channel (Dual)	20 V		0.9 nC	Surface Mount	350 mW		6-TSSOP SC-88 SOT-363	39 pF	MOSFET (Metal Oxide)	500 mA	SOT-363	400 mOhm	1 V
Panjit International Inc. PJT7802_S1_00001	150 °C	-55 °C	2 N-Channel (Dual)	20 V		0.9 nC	Surface Mount	350 mW		6-TSSOP SC-88 SOT-363	39 pF	MOSFET (Metal Oxide)	500 mA	SOT-363	400 mOhm	1 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 20V 500mA (Ta) 350mW (Ta) Surface Mount SOT-363

Technical documentation and resources