Specification	SSM3K09FU,LF

Current - Continuous Drain (Id) @ 25°C	400 mA
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	3.3 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	20 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-323, SC-70
Power Dissipation (Max) [Max]	150 mW
Rds On (Max) @ Id, Vgs	700 mOhm
Supplier Device Package	USM
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	1.8 V

SSM3K09FU Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 30 V, 0.4 A, 0.7 Ω@10V, SOT-323(USM)

Part	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	FET Type	Package / Case	Supplier Device Package	Technology	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)
Toshiba Semiconductor and Storage SSM3K09FU,LF	400 mA	150 °C	150 mW	10 V	3.3 V	700 mOhm	1.8 V	30 V	N-Channel	SC-70 SOT-323	USM	MOSFET (Metal Oxide)	Surface Mount	20 pF	20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 30 V, 0.4 A, 0.7 Ω@10V, SOT-323(USM)

Technical documentation and resources