Discrete Semiconductor Products

MPS3906,126

Obsolete

TRANS PNP 40V 0.1A TO92-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

TRANS PNP 40V 0.1A TO92-3

Technical Specifications

Parameters and characteristics for this part

Specification	MPS3906,126

Current - Collector (Ic) (Max)	0.1 mA
Current - Collector Cutoff (Max)	50 nA
DC Current Gain (hFE) (Min)	100
Frequency - Transition	150 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-92-3 (TO-226AA) Formed Leads, TO-226-3
Package Name	TO-92-3
Power - Max	0.5 W
Transistor Type	PNP
Vce Saturation (Max)	400 mV
Voltage - Collector Emitter Breakdown (Max)	40 V

Part	Voltage - Collector Emitter Breakdown (Max)	DC Current Gain (hFE) (Min)	Current - Collector (Ic) (Max)	Frequency - Transition	Power - Max	Package / Case	Operating Temperature	Mounting Type	Transistor Type	Vce Saturation (Max)	Package Name	Current - Collector Cutoff (Max)
NXP USA Inc. MPS3904,126	40 V	100	0.1 mA	180 MHz	0.5 W	TO-226-3 TO-92-3 (TO-226AA) Formed Leads	150 °C	Through Hole	NPN	300 mV	TO-92-3	50 nA
NXP USA Inc. MPS3906,126	40 V	100	0.1 mA	150 MHz	0.5 W	TO-226-3 TO-92-3 (TO-226AA) Formed Leads	150 °C	Through Hole	PNP	400 mV	TO-92-3	50 nA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

3D models and CAD resources for this part

General part information

Bipolar (BJT) Transistor PNP 40 V 100 mA 150MHz 500 mW Through Hole TO-92-3

Technical documentation and resources