PSMN1R6-30MLHX

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MOSFET N-CH 30V 160A LFPAK33

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Discrete Semiconductor Products

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MOSFET N-CH 30V 160A LFPAK33

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN1R6-30MLHX

Current - Continuous Drain (Id) @ 25°C	160 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	41 nC
Input Capacitance (Ciss) (Max) @ Vds	2369 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max)	106 W
Rds On (Max) @ Id, Vgs	1.9 mOhm
Supplier Device Package	LFPAK33
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.2 V

Part	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	FET Type
Freescale Semiconductor - NXP PSMN1R6-30MLHX	20 V	-55 °C	175 ░C	MOSFET (Metal Oxide)	30 V	2.2 V	2369 pF	160 A	106 W	1.9 mOhm	41 nC	Surface Mount	4.5 V 10 V	LFPAK33	N-Channel

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General part information

N-Channel 30 V 160A (Tc) 106W (Tc) Surface Mount LFPAK33

Technical documentation and resources