Discrete Semiconductor Products

PRMH2Z

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50 V, 100 MA NPN/NPN RESISTOR-EQUIPPED DOUBLE TRANSISTORS (RET)

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Discrete Semiconductor Products

Active

50 V, 100 MA NPN/NPN RESISTOR-EQUIPPED DOUBLE TRANSISTORS (RET)

Technical Specifications

Parameters and characteristics for this part

Specification	PRMH2Z

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	80
Frequency - Transition	230 MHz
Grade	Automotive
Mounting Type	Surface Mount
Package / Case	6-XFDFN Exposed Pad
Power - Max [Max]	480 mW
Qualification	AEC-Q101
Resistor - Base (R1)	47 kOhms
Resistor - Emitter Base (R2)	47 kOhms
Supplier Device Package	DFN1412-6
Transistor Type	2 NPN - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic	150 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Grade	Supplier Device Package	Power - Max [Max]	Transistor Type	Resistor - Emitter Base (R2)	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Qualification	Frequency - Transition	Current - Collector (Ic) (Max) [Max]	Resistor - Base (R1)	Mounting Type
Nexperia USA Inc. PRMH2Z	1 µA	150 mV	Automotive	DFN1412-6	480 mW	2 NPN - Pre-Biased (Dual)	47 kOhms	6-XFDFN Exposed Pad	80	50 V	AEC-Q101	230 MHz	100 mA	47 kOhms	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

NPN/NPN Resistor-Equipped double Transistors (RET) in an ultra small DFN1412-6 (SOT1268) leadless Surface-Mounted Device (SMD) plastic package.

Technical documentation and resources