Discrete Semiconductor Products

SQ9407EY-T1_BE3

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MOSFET P-CH 60V 4.6A 8SOIC

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Discrete Semiconductor Products

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MOSFET P-CH 60V 4.6A 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	SQ9407EY-T1_BE3

Current - Continuous Drain (Id) @ 25°C	4.6 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	40 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1140 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max) [Max]	3.75 W
Qualification	AEC-Q101
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Vgs(th) (Max) @ Id	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Qualification	Power Dissipation (Max) [Max]	Grade	Package / Case	Package / Case [y]	Package / Case [x]	Technology	Mounting Type	Drain to Source Voltage (Vdss)	Vgs (Max)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]
Vishay General Semiconductor - Diodes Division SQ9407EY-T1_GE3	2.5 V	P-Channel	1140 pF	40 nC	4.6 A	4.5 V 10 V	AEC-Q101	3.75 W	Automotive	8-SOIC	3.9 mm	0.154 in	MOSFET (Metal Oxide)	Surface Mount	60 V	20 V	8-SOIC
Vishay General Semiconductor - Diodes Division SQ9407EY-T1_BE3	2.5 V	P-Channel	1140 pF	40 nC	4.6 A	4.5 V 10 V	AEC-Q101	3.75 W	Automotive	8-SOIC	3.9 mm	0.154 in	MOSFET (Metal Oxide)	Surface Mount	60 V	20 V	8-SOIC	-55 °C	175 ░C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 60 V 4.6A (Tc) 3.75W (Tc) Surface Mount 8-SOIC

Technical documentation and resources