Discrete Semiconductor Products

SISS98DN-T1-GE3

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MOSFET N-CH 200V 14.1A PPAK

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Discrete Semiconductor Products

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MOSFET N-CH 200V 14.1A PPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SISS98DN-T1-GE3

Current - Continuous Drain (Id) @ 25°C	14.1 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	7.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	608 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8
Power Dissipation (Max)	57 W
Rds On (Max) @ Id, Vgs	105 mOhm
Supplier Device Package	PowerPAK® 1212-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Technology	FET Type	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drain to Source Voltage (Vdss)	Mounting Type	Supplier Device Package
Vishay General Semiconductor - Diodes Division SISS98DN-T1-GE3	105 mOhm	14.1 A	MOSFET (Metal Oxide)	N-Channel	20 V	-55 °C	150 °C	57 W	PowerPAK® 1212-8	608 pF	4 V	10 V	7.5 V	200 V	Surface Mount	PowerPAK® 1212-8

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General part information

N-Channel 200 V 14.1A (Tc) 57W (Tc) Surface Mount PowerPAK® 1212-8

Technical documentation and resources