Discrete Semiconductor Products

PCP1402-TD-H

Obsolete

MOSFET N-CH 250V 1.2A SOT89

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 250V 1.2A SOT89

Technical Specifications

Parameters and characteristics for this part

Specification	PCP1402-TD-H

Current - Continuous Drain (Id) @ 25°C	1.2 A
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	4.2 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	210 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-243AA
Power Dissipation (Max)	3.5 W
Rds On (Max) @ Id, Vgs [Max]	2.4 Ohm
Supplier Device Package	SOT-89/PCP-2
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	3.5 V

Part	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Operating Temperature	FET Type	Drain to Source Voltage (Vdss)	Mounting Type	Vgs (Max)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor PCP1402-TD-H	MOSFET (Metal Oxide)	210 pF	TO-243AA	3.5 V	2.4 Ohm	4.2 nC	1.2 A	SOT-89/PCP-2	150 °C	N-Channel	250 V	Surface Mount	30 V	3.5 W	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 250 V 1.2A (Ta) 3.5W (Tc) Surface Mount SOT-89/PCP-2

Technical documentation and resources

No documents available