Discrete Semiconductor Products

MCT03N06-TP

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Discrete Semiconductor Products

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INTERFACE

Technical Specifications

Parameters and characteristics for this part

Specification	MCT03N06-TP

Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	6 nC
Input Capacitance (Ciss) (Max) @ Vds	247 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max) [Max]	1.2 W
Rds On (Max) @ Id, Vgs	105 mOhm
Supplier Device Package	SOT-223
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Part	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	FET Type	Technology	Rds On (Max) @ Id, Vgs	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Supplier Device Package	Mounting Type
Micro Commercial Components MCT03N06-TP	2 V	4.5 V 10 V	6 nC	60 V	20 V	3 A	N-Channel	MOSFET (Metal Oxide)	105 mOhm	TO-261-4 TO-261AA	247 pF	-55 °C	150 °C	1.2 W	SOT-223	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	30000	$ 0.15

General part information

N-Channel 60 V 3A 1.2W Surface Mount SOT-223

Technical documentation and resources